High-Power, High-Temperature Operation of AlInGaAs-AlGaAs Strained Single-Quantum-Well Diode Lasers

摘要

AlInGaAs-AlGaAs graded index separate confinement heterostructure single-quantum-well diode lasers with cavity width and length of 500 and 1000 micrometers, respectively, have been operated CW at heatsink temperatures up to 125 C, with output power up to 4.9 W per facet and power efficiency as high as 49% measured at 10 C. Promising results have been obtained in initial reliability tests on uncoated devices at heatsink temperatures of 10 and 50 C. Recently, we reported AlInGaAs-AlGaAs strained quantum well lasers, with emission wavelengths ranging from 785 to 890 nm, that had threshold current densities as low as 103 A/cm2 and differential quantum efficiencies as high as 90% for cavity lengths of 1500 and 300 micrometers, respectively. Because the density of states is reduced by compressive strain, these lasers have lower threshold current densities than AlGaAs-AlGaAs lasers.