Improved measurements of doping profiles in silicon using CV techniques

摘要

One of the problems of doping profile measurements using CV techniques is that numerical differentiation is required. This can, under certain circumstances, result in very noisy profiles. A method is presented for obtaining noise-free profiles by choosing a step size that takes account of the resolution of the capacitance meter to ensure that the maximum profile detail is retained. A range of other factors that can affect profiling accuracy is also reviewed.