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Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device
Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device
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机译:具有改善的掺杂轮廓的半导体器件以及改善半导体器件的掺杂轮廓的方法
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摘要
An implanting process for amorphizing a crystalline substrate is proposed according to the present invention. In particular, according to the present invention, amorphous regions are formed in a substrate by exposing the substrate to an ion beam which is kept at a tilt angle between 10 and 80 degrees with respect to the surface of the substrate. Accordingly, ion channeling during subsequent implanting processes is prevented not only in the vertical direction but also in the horizontal direction so that doped regions exhibiting optimum doping profile tailoring may be realized.
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