Terahertz Time-Domain Spectroscopy for Characterization of Doping Profiles in Semiconductors

摘要

Various methods currently used for determining doping profiles in semiconductors are secondary ion mass spectroscopy (SIMS), spreading resistance profiling (SRP), and capacitance-voltage measurements. SIMS is a physical characterization technique that counts all dopant atoms, whereas SRP and CV are electrical characterization techniques that measure only the electrically active ones. All these techniques have their strengths and limitations. In this paper, we present the use of terahertz spectroscopy to monitor dopant profiles in silicon.