Use of Resonance Ionization Microprobe Analysis for Characterization ofUltrashallow Doping Profiles in Semiconductors

摘要

We have built an analytical time-of-flight instrument capable of sputter-initiated resonance ionization microprobe (SIRIMP) measurements. This instrument has the ability to obtain ultrashallow doping profiles with high depth resolution and dynamic range and virtually no matrix effects. The SIRIMP technique is especially valuable for ultratrace element analysis in samples where the complexity of the matrix is frequently a serious source of interferences. We describe the capability of the SIRIMP technique to quantitate with high accuracy and dynamic range dopant and impurity concentrations in silicon and silicon oxide