Technology of superconducting thin films on Si, SiO/sub 2/, and Si/sub 3/N/sub 4/ for vacuum microelectronics

摘要

A study of YBaCuO films on Si, SiO/sub 2/, and Si/sub 3/N/sub 4/ substrates demonstrates that rapid thermal processing can suppress the film-substrate reaction during the postgrowth oxygen annealing. By increasing the copper content of YBaCuO films that are sputter-deposited on SiO/sub 2//Si to correspond to the 1:2:3 metal composition, the authors have achieved an onset of superconductivity above 95 K and a T/sub c/(0) above 70 K through a rapid oxygen anneal for 6 s at 940 degrees C without a nitrogen preanneal. These results as well as results of others suggest that high T/sub c/ oxide superconductors could be used as electron sources or as cold emitters, gates, and collectors.