The present invention provides a method for producing a material for SiO_2 thin film formation, which comprises the following steps: obtaining a hydrolysate by hydrolyzing tetraalkoxysilane; and producing a coating solution containing a precursor represented by chemical formula 1 by reacting the hydrolysate with trifunctional silane. In the chemical formula 1, m+n=100, 30=m90, 10=n70, x+y=2, 0x=1.7, and 0y0.3. According to method of the present invention, a material for forming a SiO_2 thin film with high crosslinking density, uniform composition, and high purity of components can be produced by controlling warping of a nanostructure.;COPYRIGHT KIPO 2016
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机译：本发明提供了一种用于SiO 2薄膜形成的材料的制造方法，包括以下步骤：通过水解四烷氧基硅烷获得水解产物;通过使水解产物与三官能硅烷反应，制备包含化学式1表示的前体的涂布液。在化学式1中，m + n ＝ 100、30 ＜＝ m ＜90、10 ＜＝ n ＜70，x + y ＝ 2、0 ＜x ＜＝ 1.7和0 ＜y ＜0.3。根据本发明的方法，可以通过控制纳米结构的翘曲来生产用于形成具有高交联密度，均匀组成和高纯度组分的SiO_2薄膜的材料。COPYRIGHTKIPO 2016
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