Quantum interference devices fabricated using molecular-beam epitaxy and ultra-high-resolution electron-beam lithography

摘要

Summary form only given. The authors have fabricated various new lateral quantum interference devices (QIDs) using molecular-beam epitaxy and ultra-high-resolution electron-beam lithography and have observed conductance oscillations in these devices. These QIDs have a structure which is similar to that of a conventional MODFET, except for the gate(s), which consists of various nanometer patterns instead of a plain gate. The gate nanometer patterns create electrostatic potential barriers and well(s) in the channel. At low temperatures, as the electron mean-free path approaches or becomes longer than the gate length, quantum interference of the electron wave with the barriers and wells results in the formation of quasi-bound states or subbands, and, as a result, the conductance oscillates as either the gate voltage or the source-drain voltage is scanned. Several novel QIDs are presented with emphasis on a new lateral quantum box transistor (LQBFET), which has a railway track gate.