Hydrostatic pressure effect on molecular-beam epitaxy-grown indium gallium phosphide alloys and gallium arsenide/indium gallium phosphide quantum well structures.

摘要

The band structure of MBE-grown ;The band offsets for the GaAs/In;A blue shift of photoluminescence peak energy with laser excitation intensity in the p-type GaAs/In;A reduction of pressure coefficients for the GaAs confined transitions in the GaAs/InGaP quantum well structures was also observed. The pressure coefficients are 23, 22, 20, 15, and 10 meV/GPa smaller than that of bulk GaAs for the well thicknesses of 0.57, 0.85, 2.1, 3.7, and 5.9 nm respectively. A theoretical calculation based on the pressure dependence of potential barrier height, the well thickness, and the effective masses of carriers gives good agreement to the experimental results under the reasonable assumption of constant valence band offset.;The