Noise characterization of an AlGaAs interdigitated metal-semiconductor-metal photodetector (MSM-PD)

摘要

The noise characterization of an InGaAs interdigitated metal-semiconductor-metal photodetector (MSM-PD) illuminated with 1.3- mu m wavelength radiation is presented. The range of frequencies for the noise measurements included is (0.1-100 kHz) and (500 MHz to -1 GHz). A description of the high-frequency measurement setup, as well as the noise spectra for low and high frequencies, is included. While full shot noise was expected at high frequencies, a value of