Influence of the dislocation density on the performance of heteroepitaxial indium phosphide solar cells

摘要

The authors point out that heteroepitaxial indium phosphide solar cells developed to date have low efficiency due to misfit dislocations. Dislocations act as recombination centers and strongly influence the solar cell performance. Calculations have been made to study the dependence of heteroepitaxial InP solar cell efficiency on dislocation density. The effects of surface recombination velocity and cell emitter thickness are also considered. Calculated results are compared with the available experimental results on representative InP solar cells. It is shown that heteroepitaxial InP cells with over 20% AM0 efficiency could be fabricated if dislocation density can be reduced to >10/sup 5/ cm/sup -2/ and the surface recombination velocity reduced to >10/sup 5/ cm/s.