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Electrodeposition of high-purity indium thin films and its application to indium phosphide solar cells

机译:高纯铟薄膜的电沉积及其在磷化铟太阳能电池中的应用

摘要

We report on advances in the electrochemical deposition of indium (In) on molybdenum foil that enables deposition of electronicgrade purity, continuous films with thickness in the micron range. The desired In film morphology is obtained from an InCl3 aqueous bath by using a high current density of 250 mA/cm2 and a low deposition-bath temperature of −5◦C to increase the nucleation density of In islands until a continuous film is obtained. As an example application, the electrodeposited In films are phosphorized via the thin-film vapor-liquid-solid growth method. The resulting poly-crystalline InP films display excellent optoelectronic quality, comparable to single crystalline InP wafers, thus demonstrating the versatility of the developed electrochemical deposition procedure.
机译:我们报告了钼箔上铟(In)的电化学沉积技术的进展,该技术能够沉积电子级纯度的连续膜,其厚度在微米范围内。通过使用250 mA / cm2的高电流密度和-5°C的低沉积浴温度从InCl3水浴中获得所需的In膜形态,以提高In岛的成核密度,直到获得连续膜为止。作为示例应用,通过薄膜气液固生长方法使电沉积的In膜磷化。所得的多晶InP膜显示出与单晶InP晶圆相当的优异光电质量,从而证明了已开发的电化学沉积程序的多功能性。

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