Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET's

摘要

The effects of typical manufacturing fluctuations upon four electrical device parameters: threshold voltage, transconductance, substrate current and off current have been studied for deep submicron MOSFET's (0.1 /spl mu/m). The analysis reveals that the electrical parameter sensitivity in deep submicron devices differs from micron size devices, making a revision of the validity of conventional semiconductor manufacturing heuristics for future technology mandatory.