Channel size dependence of dopant-induced threshold voltage fluctuation deep submicron MOSFETs

摘要

L and W dependence of dopant-induced V/sub TH/ fluctuation is analyzed using a newly proposed quasi-resistance method. It is revealed that the (LW)/sup -1/2/ relationship originates from a V/sub TH/ averaging effect, caused by the subthreshold current. The relationship is expected to hold down to 0.1 /spl mu/m generation.