Self-consistent modeling of resonant interband tunneling in bipolar tunneling field-effect transistors

摘要

We present a model for the calculation of the tunneling current in resonant interband tunneling devices based on a transfer-Hamiltonian formalism. The model is fully self-consistent and includes electrons and both light and heavy holes. In particular, we show the viability of the bipolar tunneling field-effect transistor as a three-terminal multiple-NDR device with predicted currents reaching over 1000 A/cm/sup 2/ and theoretical peak-to-valley ratios up to 300.