A self-aligned trenched cathode lateral insulated gate bipolar transistor with high latch-up resistance

摘要

This paper discusses a modified insulated gate bipolar transistor (LIGBT) structure using a self-aligned trenched contact at the cathode of the device which significantly reduces the parasitic p-base resistance underneath the n/sup +/ cathode region to suppress the latch-up. The trenched cathode LIGBT (TC-LIGBT) structure is BiCMOS compatible and the LIGBTs with latching current densities over 1200 A/cm/sup 2/ have been obtained using a 4 /spl mu/m technology.