A simple model for quantum mechanical effects in hole inversion layers in silicon PMOS devices

摘要

The effects of quantization of the inversion layer of MOSFET devices is an area of increasing importance as technology is aggressively scaled below 0.25 /spl mu/m. Although electron inversion layers have attracted considerable interest, very little work has been reported for holes. This paper describes the implementation and results of a simple, computationally efficient model, appropriate for device simulators, for predicting the effects of hole inversion layer quantization. This model compares very favorably with experimental results and the predictions of a full-band, self-consistent Schrodinger-Poisson solver.