Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations

摘要

A synthesis of the most frequent transient phenomena due to floating-body effects in partially depleted SOI MOSFET's is presented. The dominant physical mechanisms are examined through a variety of experiments. Comprehensive models which predict the transient effects are included in SOISPICE. Simulated transients involving both generation and recombination are fully validated by the experiments and are shown to he useful for reliable carrier lifetime extraction as well as SOI circuit simulation.