Surface accumulated lateral npn BJT's characteristics in SOI NMOSFETs

摘要

Lateral npn bipolar junction transistors (BJTs) in SOI MOSFET structures are investigated under various gate voltages. Negative resistance caused by base resistance modulation is observed. The surface-accumulated BJT mode is superior to the MOSFET mode in transconductance-to-current ratio and output resistance. Scaling properties are also discussed together with the need for a P/sup +/ polysilicon gate.