The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology

摘要

The high temperature DC characteristics of a high-voltage bulk Si lateral insulated- gate bipolar transistor in junction isolation (JI-LIGBT) technology is studied intensively in this paper. The current density distribution in the off-state at different temperatures of three types of device structure is compared. By using the Quasi-vertical DMOSFET (QVDMOS or multi-channel, MC) structure, the electron injection from the channel into the n-drift region is significantly enhanced, and the current density is improved. In addition, by extending the p-top layer to the NPN anode not only improves the breakdown voltage but also reduces the substrate current as well as ensures high temperature stability. (C) 2017 Elsevier Ltd. All rights reserved.