透明栅控SOI薄膜横向PIN光电探测器的光电特性

摘要

Thin-film gated silicon-on-insulator (SOI)lateral PIN photodetector is a novel photodetector,based on standard SOI technology and CMOS process,combining the conventional bipolar and field effect photosensitive device structure.The basic structure of this novel photodetector is described and the operation principle is analyzed.Applying physical equations of semiconductor device,the gate voltage and photocurrent models can be built.Two-dimensional numerical simulations are performed in SILVACO software.In the middle-short wavelength operation period,the output photocurrent increases with gate voltage,with the obvious gated-control characteristics.Under fully depleted condition,the internal quantum efficiency can yield over 96%,even near 100% for the varied wavelengths(400nm,450nm,530nm,600nm).For short wavelengths(280nm, 350nm),the internal quantum efficiency is relatively lower,the maximum is approximately 80%.And the dark current of this photodetector is low,leading to a high ratio of more than 106 between illuminated to dark current,achieving high sensitivity.%透明栅控 SOI 薄膜横向 PIN 光电探测器，是一种以 SOI 技术和互补金属氯化物半导体工艺为基础，综合 SOI 器件和传统双极、场效应光敏器件的新型光电探测器。利用半导体器件物理和基本方程，介绍和分析了器件结构及其工作原理，建立电压、电流物理模型。应用 SILVACO 器件仿真软件，完成器件的数值模拟与验证。在中短波长工作段，器件光电流随栅极电压的增大而增大，表现出明显的栅压控制特性。全耗尽状态下，器件的内部量子效率在中短波长（400nm，450nm，530nm，600nm）的光辐射下，可达到96％以上，甚至接近100％。短波长下（280nm，350nm），量子效率最大值近80％。此外，器件的暗电流很低，光暗电流之比超过106，具有高灵敏度。