Novel offset gated poly-Si TFTs with subgate

摘要

We have fabricated a new offset gated poly-Si TFT by employing photoresist reflow, have measured various experimental data of the new device, such as hydrogenation results and high-frequency characteristics, and have analyzed device characteristics as a function of driving frequency. Our devices have a unique gate pattern and the hydrogenation effect is somewhat different from the previous results. Our experimental results suggest that with the same offset length, the device with a wider space between the maingate and the subgate is more advantageous for hydrogenation. Experimental results show that the leakage current of the new device is two orders of magnitude lower than that of the nonoffset gated device, while the ON current of the new device is almost identical to the nonoffset gated device in the typically used frequency range (10-100 kHz).