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Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate
Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate
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机译:绝缘栅型场效应晶体管,其子栅距衬底的距离与主栅距不同
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摘要
An active layer of an insulated-gate type field effect transistor is formed by a thin film of an intrinsic polycrystalline semiconductor and a source electrode and a drain electrode are formed on the active layer. A source region and a drain region are not formed in the active layer. A main gate electrode is formed on a gate insulating film of a portion between the source electrode and the drain electrode. Subgate electrodes are formed on the gate insulating film in a portion between the source electrode and the main gate electrode and a portion between the drain electrode and the main gate electrode, respectively.
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