Novel Offset-Gated Bottom Gate Poly-Si TFTs With a Combination Structure of Ultrathin Channel and Raised Source/Drain

摘要

We propose an offset-gated bottom gate polycrystalline silicon thin-film transistor (TFT), with a combination structure of ultrathin channel and raised source/drain, employing a simple process of the back surface exposure. It is experimentally and simulatedly demonstrated that the new device has lower leakage current and better saturation characteristics, as compared with the conventional nonoffset TFT, due to the lateral electric field near the drain, which is reduced by the proposed structure. Moreover, the proposed TFT exhibits much better ON/OFF current ratio because the high current drive due to the raised source/drain structure is enough to compensate for the ON-state current reduction due to the offset-gate structure.