Three-dimensional modeling of the erasing operation in a submicron flash-EEPROM memory cell

摘要

This paper addresses the modeling of the erasing operation in a realistic flash-EEPROM cell, based on a three-dimensional (3-D) device-simulation code in which models for higher-order physical effects have been incorporated, specifically, the Fowler-Nordheim (FN) and the band-to-band tunneling. The ability of the code to consistently determine the floating-gate potential is shown. The distribution of the band-to-band generation rate within the device during the erasing process is investigated. The experimental characteristics of the erasing process of a memory cell are successfully reproduced.