Non-volatile memory device erasing method e.g. for NAND flash memory device, used in computer system, involves repeatedly performing erase verify operation under different bias conditions of word lines of memory cells erased at same time

摘要

The method involves erasing the memory cells (MC0-MCm) that are arranged in a matrix of rows and columns at the same time. An erase verify operation is repeatedly performed under different bias conditions of the word lines (WL0-WLm) of the erased memory cells. An independent claim is also included for non-volatile memory device.