首页> 外国专利> FLASH MEMORY DEVICE AND A DATA ERASE METHOD THEREOF, CAPABLE OF PERFORMING AN ERASE OPERATION AT EACH WORD LINE

FLASH MEMORY DEVICE AND A DATA ERASE METHOD THEREOF, CAPABLE OF PERFORMING AN ERASE OPERATION AT EACH WORD LINE

机译:闪存存储器及其数据擦除方法,能够在每条字线上执行擦除操作

摘要

PURPOSE: A flash memory device and a data erase method thereof are provided to erase the cell of only a biased word line by biasing a part of a word line to voltage level.;CONSTITUTION: A cell block(110) comprises a plurality of cell strings and a plurality of word lines. A plurality of cell strings comprises a plurality of cells which are connected in series. A plurality of word lines shares a gate of the cells comprising the cell string. A plurality of word line switches(130) switches and connects each word line of the cell block by a predetermined voltage level. A controller(150) receives a deletion command and a row address. The controller turns on/off the switch of each word line.;COPYRIGHT KIPO 2010
机译:目的:提供了一种闪存设备及其数据擦除方法,其通过将字线的一部分偏置到电压电平来仅擦除偏置的字线的单元。构成:单元块(110)包括多个单元串和多个字线。多个电池串包括串联连接的多个电池。多个字线共享包括单元串的单元的栅极。多个字线开关(130)以预定电压电平切换并连接单元块的每个字线。控制器(150)接收删除命令和行地址。控制器打开/关闭每个字线的开关。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100076738A

    专利类型

  • 公开/公告日2010-07-06

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20080134876

  • 发明设计人 LEE YONG JUNG;

    申请日2008-12-26

  • 分类号G11C16/16;G11C16/14;G11C16/08;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:19

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