Noise associated with interdigitated gate structures in RF submicron MOSFETs

摘要

CMOS technologies have gained considerable attention and have raised expectations for employment in RF transceivers. The shrinkage of the MOSFET device dimensions along with the relatively wide gate electrode devices needed to accommodate RF applications lead to reconsideration of the noise properties of submicron MOSFETs. In this paper, we present the noise properties associated with interconnect resistors of an interdigitated structure and the resulting noise source (strong function of the number of fingers) is evaluated against the other noise sources present in the device such as channel thermal noise, induced gate noise, and resistive gate voltage noise. Short channel effects have been taken into account for the evaluation of these noise sources and two-port analysis performed in order to calculate minimum noise figure and optimum input resistance for noise matching.