RF extraction method for source/drain overlap and depletion length of deep-submicron RF MOSFETs using intrinsic gate-bulk capacitance

摘要

The source/drain overlap and depletion length in deep-submicron RF multifinger MOSFETs is accurately determined by a new RF method based on the direct extraction of the extrinsic gate-bulk capacitance using S-parameters biased at V_(GS) > V_(TH) and V_(DS) = 0V. This RF method is proposed to remove the serious error of a conventional C-V method due to the influence of the extrinsic capacitance.