Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source–Drain Resistances in MOSFETs

摘要

A new technique for a separate extraction of the current-path-dependent resistance $(R_{{rm SD}0})$ from the contact-dependent source and drain resistances $(R_{rm Se} hbox{and} R_{rm De})$ is reported for a single MOSFET. We also report a technique for a separation of $V_{rm GS}$ -dependent source and drain resistance $(R_{rm SDi})$ from the $V_{rm GS}$- and $L_{rm eff}$-dependent channel resistance $(R_{rm ch})$ with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various $W/L$ combinations and obtain $R_{rm Se} = hbox{10.5} {-} hbox{12.4} Omega$ , $R_{rm De} cong hbox{12.7} Omega$, and $R_{{rm SD}0} = hbox{4.7} Omega$ for $W = hbox{10} muhbox{m}$. $V_{rm GS}$-dependent but $L$-independent $R_{rm SDi}$ is extracted to be $hbox{2.8} {-} hbox{4.2} Omega$.