首页> 外国专利> Complementary MOS logic circuit has inverter with two MOSFETs - in drain-drain series and depleted types gate connected to its source

Complementary MOS logic circuit has inverter with two MOSFETs - in drain-drain series and depleted types gate connected to its source

机译:互补MOS逻辑电路具有带两个MOSFET的逆变器-漏极-漏极串联和耗尽型栅极连接到其源极

摘要

The complementary MOS logic circuit has an inverter which is constructed from two complementary MOSFETs which are connected together at their drains to a common output terminal (3) and are connected by their sources to the oppositely-poled supply terminals (4, 6). The input signal (5) is applied to the MOSFET at the first gate. The second MOSFET (2) is depleted and has its gate connected to its source. The advantage of the logic lies in its avoiding delays arising from capacitance when connected into a chain of logic elements. The logic also has increased packing density.
机译:互补MOS逻辑电路具有一个反相器,该反相器由两个互补MOSFET构成,两个MOSFET在其漏极连接到一个公共输出端子(3),并通过其源极连接到反向极化的电源端子(4、6)。输入信号(5)在第一栅极施加到MOSFET。第二个MOSFET(2)耗尽,其栅极连接到其源极。逻辑的优点在于,避免了在连接到逻辑元件链中时由于电容引起的延迟。逻辑也增加了包装密度。

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