Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies

摘要

In this paper, an ensemble 2D bipolar Monte Carlo simulator is employed for the study of static characteristics, high-frequency response and noise behaviour in a 0.3 μm gate-length n-MOSFET in common source configuration. Short-channel effects, such as velocity overshoot in the pinch-off region, together with the appearance of hot electrons at the drain end of the channel are observed in the static characteristics. Admittance parameters and the small-signal equivalent circuit have been calculated in order to characterize the dynamic response of the device.