Direct Parameter Extraction of SiGe HBTs for the VBIC Bipolar Compact Model

摘要

An improved direct parameter extraction method of SiGe heterojunction bipolar transistors (HBTs) for the vertical bipolar intercompany (VBIC)-type hybrid-π model is developed. All the equivalent circuit elements are extracted analytically from 5-parameter data only and without any numerical optimization. The proposed technique of the parameter extraction, differing from the previous ones, focuses on correcting the pad de-embedding error for an accurate and invariant extraction of intrinsic base resistance {R{sub}(bi)), formulating a new parasitic substrate network, and improving the extraction procedure of transconductance (g{sub}m), dynamic base-emitter resistance (rv), and base-emitter capacitance (C{sub}π) using the accurately extracted R{sub}(bi)- The extracted parameters are frequency-independent and reliable due to elimination of any de-embedding errors. The agreements between the measured and model-calculated data are excellent in the frequency range of 0.2-10.2 GHz over a wide range of bias points. Therefore, we believe that the proposed extraction method is a simple and reliable routine applicable to the optimization of transistor design, process control, and the improvement of VBIC compact model, especially for SiGe HBTs.