Parameter extraction and evaluation of the Bias dependence of Tf, for the VBIC Model used on a GaAs HBT

摘要

This paper presents a practical method of extracting the bias dependent parameters of the forward transit time Tf, implemented in the VBIC model used on a GaAs HBT. The work should be of great value for the circuit designers, who want to have an easy practical way of including good model parameters from a few simple measurements. This paper includes an evaluation of the implemented bias dependence of Tf in the VBIC model. The VBIC model is extracted from measurements on a GaAs HBT made by Caswell Technology. The model shows good agreement with these measurements.