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The Geometry Effect of Contact Etch Stop Layer Impact on Device Performance and Reliability for 90-nm SOI nMOSFETs

机译:接触蚀刻停止层的几何效应对90nm SOI nMOSFET器件性能和可靠性的影响

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摘要

The thickness effects of a high-tensile-stress contact etch stop layer (HS CESL) and the impact of layout geometry (length of diffusion (LOD) and gate width) on the mobility enhancement of lang100rang/(100) 90-nm silicon-on-insulator (SOI) n-channel MOSFETs (nMOSFETs) were studied in detail. Additionally, the low-frequency characteristics were inspected using low-frequency noise investigation for floating body (FB)-SOI nMOSFETs. Experimental results show that a device with a 1100-Aring HS CESL has worse characteristics and hot-carrier-induced degradations than a device with a 700-Aring; HS CESL due to larger stress-induced defects. The lower plateau of the Lorentzian noise spectrum that was observed from the input-referred voltage noise Svg implies a higher leakage current for devices with a 1100-Aring HS CESL. On the other hand, it was found that devices with narrow gate widths have higher driving capacity for a larger fringing electric field and higher compressive stress in the direction perpendicular to the channel. Because of the more serious impact of compressive stress in a direction parallel to the channel, a device with shorter LOD experiences more serious performance degradation
机译:高应力接触蚀刻停止层(HS CESL)的厚度效应以及布局几何形状(扩散长度(LOD)和栅极宽度)对lang100rang /(100)90-nm硅迁移率增强的影响详细研究了绝缘体上(SOI)N沟道MOSFET(nMOSFET)。此外,使用低频噪声研究对浮体(FB)-SOI nMOSFET进行了低频特性检查。实验结果表明,与具有700环的HS CESL器件相比,具有700环的HS CESL具有更差的特性和热载流子引起的退化。 HS CESL由于更大的应力引起的缺陷。从输入参考电压噪声Svg观察到的洛伦兹噪声谱的较低平台意味着具有1100环HS CESL的设备的泄漏电流更高。另一方面,发现具有窄栅极宽度的器件在垂直于沟道的方向上具有更大的驱动能力以用于更大的边缘电场和更高的压应力。由于在平行于通道的方向上压缩应力的影响更加严重,因此LOD越短的设备性能下降越严重。

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