Shallow-Trench-Isolation (STI)-Induced Mechanical-Stress-Related Kink-Effect Behaviors of 40-nm PD SOI NMOS Device

摘要

This brief reports the shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of the 40-nm PD silicon on insulator (SOI) NMOS device. As verified by the experimentally measured data and the 2-D simulation results, the kink-effect behaviors occur at a higher $V_{D}$ in the saturation region and show a less steep subthreshold slope for the 40-nm PD device with a smaller S/D length of 0.17 ${rm mu}hbox {m}$ due to the weaker function of the parasitic bipolar device as a result of the larger body-source bandgap-narrowing effect coming from the higher STI-induced mechanical stress.