Subthreshold Performance of Dual-Material Gate CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications

摘要

Analog circuits based on the subthreshold operation of CMOS devices are very attractive for ultralow power, high gain, and moderate frequency applications. In this paper, the analog performance of 100 nm dual-material gate (DMG) CMOS devices in the subthreshold regime of operation is reported for the first time. The analog performance parameters, namely drain–current (${I_{d}}$), transconductance (${g_{m}}$), transconductance generation factor ( ${g_{m}}$/${I_{d}}$ ), early voltage $({V_{A}})$, output resistance ( ${R_{o}}$) and intrinsic gain for the DMG n-MOS devices, and ${V_{A}}$ and ${R_{o}}$ for the DMG p-MOS devices are systematically investigated with the help of extensive device simulations. The effects of different capacitances on the unity-gain frequency $({f_{T}})$ are also studied. The DMG CMOS devices are found to have significantly better performance as compared to their single-material gate (SMG) counterpart. More than 70% improvement in the voltage gain is observed for the CMOS amplifiers when dual-material gates, instead of single-material gates, are used in both the n- and p-channel devices.