Dual Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance—Part I: Impact of Gate Metal Workfunction Engineering

摘要

In this paper, we present a simulation study, using ATLAS-2D, of analog circuit performance metrics for the dual-material gate (DMG) MOSFETs in Part I. Part II focuses on the impact of double-layer gate stack architecture on the analog performance and $f_{T}$—gain relationship of the silicon-on-nothing MOSFETs with and without DMG. The simulation results in Part I demonstrate that, out of the several combinations in DMG MOSFET design studied, the DMG device with an $L_{{ rm M}1}/L$ ratio of 1/2 amalgamates the advantages of using a high metal workfunction gate M1 and a low metal workfunction gate M2 in the most efficient manner. An increase in early voltage and a reduced output conductance from the DMG MOSFET design are the driving forces for the observed performance improvement.