Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky Barriers

摘要

A study of the reverse-leakage-current mechanisms in metal–organic-chemical-vapor-deposition (MOCVD)-grown GaN Schottky-barrier diodes is presented. An analysis is carried out of the characteristics of GaN Schottky diodes as well as of diodes with an InGaN surface layer to suppress the reverse leakage current and increase the breakdown voltage. The experimental results of the diodes with InGaN surface layers showed a $sim$40-V breakdown voltage increase and a significant leakage-current reduction under high reverse bias, in comparison with the design with GaN only. Such improvements are attributed to the reduced surface electric field and the increased electron tunneling distance induced by the polarization charges at the InGaN/GaN interface. We also report the effect of a high-pressure (near atmospheric pressure) MOCVD growth technique of the GaN buffer layer to further improve the leakage current and breakdown voltage.