首页>
外国专利>
HIGH-VOLTAGE LATERAL GAN-ON-SILICON SCHOTTKY DIODE WITH REDUCED JUNCTION LEAKAGE CURRENT
HIGH-VOLTAGE LATERAL GAN-ON-SILICON SCHOTTKY DIODE WITH REDUCED JUNCTION LEAKAGE CURRENT
展开▼
机译:减小结漏电流的高压侧向硅基肖特基二极管
展开▼
页面导航
摘要
著录项
相似文献
摘要
High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.
展开▼