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机译:金属尖峰对高压GaN肖特基势垒二极管泄漏电流的影响
Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, # 68 Yatap-dong, Bundang-gu, Seongnam, Cyeonggi-do 463-816, Republic of Korea;
Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, # 68 Yatap-dong, Bundang-gu, Seongnam, Cyeonggi-do 463-816, Republic of Korea;
School of Electrical Engineering, Seoul National University, San 56-1. Shillim-dong, Cwanak-gu, Seoul 151-744, Republic of Korea;
Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, # 68 Yatap-dong, Bundang-gu, Seongnam, Cyeonggi-do 463-816, Republic of Korea;
GaN; SBD; breakdown; leakage current; metal spikes;
机译:后氧化对Si(11 1)衬底上高压AlGaN / GaN肖特基势垒二极管泄漏电流的影响
机译:垂直型GaN-on-GaN肖特基势垒二极管中的初始泄漏电流路径
机译:在块状GaN衬底上生长的AlGaN / GaN横向肖特基势垒二极管中的超低反向漏电流
机译:低漏电流圆形AlGaN / GaN肖特基势垒二极管
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:GaN基纳米级肖特基势垒二极管中的势垒不均匀性限制了电流和1 / f噪声的传输
机译:低泄漏和高前进电流密度准垂直GaN肖特基势垒二极管,后髓质