Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage

摘要

AlGaN/GaN Schottky barrier diodes (SBDs) combined with a dual anode metal (ohmic and Schottky contacts) and a p-GaN layer were studied for improving the reverse breakdown voltage (V-BR) and reducing the turn-on voltage (V-ON). Structures with various distances of p-GaN layer (L-G) were investigated using the current-voltage (I-V), reverse recovery time, and voltage stress characteristics. The SBDs fabricated with L-G = 3 mu m realized a lower R-ON of 4.26 m ohm-cm(2) and lower V-ON of 0.10 V compared with the SBDs fabricated with L-G = 5 and 8 mu m as well as the standard device. Moreover, the V-BR of the SBDs with L-G = 3, 5, and 8 mu m was - 606, - 679, and - 713 V, respectively. The results indicated that the SBDs combined with a dual anode metal and a p-GaN layer have significantly improved V-BR than does of standard device. The reverse recovery time and reverse recovery charge of the SBD combined with a dual anode metal and a p-GaN layer design decreased due to the low noise and traps from the p-n junction.