Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs

摘要

This paper presents physics-based compact models for the $C{-}V$ and $I{-}V$ characteristics of AlGaN/GaN HEMT devices. The contribution of only the first energy level in the triangular quantum well at the AlGaN/GaN interface (where most of the charge carriers of the 2-DEG channel reside) is considered, which resulted in an accurate and simple unified charge control model. Based on this, analytical models of the drain current, the gate charge, and the gate capacitances have been developed. The models cover all the different operating regimes of a device. The excellent agreements between the model and measured $C{-}V$ and $I{-}V$ characteristics of devices with different gate lengths have demonstrated the validity of the model.