Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs

摘要

In this paper, analytical gate capacitance models for a large-signal compact model of AlGaN/GaN high-electron mobility transistors are proposed. Different from the MOSFET devices, different depletion regions on either side of the gate are fully considered for high-voltage GaN devices. The depletion regions are bias-dependent to implement the capacitance models into the large-signal compact model. A transfer function is proposed to characterize the switching behavior of the capacitances between on- and off-states, which is essential to describe all the states of a device, for example, operating at Class-B. Different from previous works, the current saturation phenomenon is taken into account in determining the intrinsic capacitances which are induced by nonstatic channel charge. The capacitance models can be easily implemented into the virtual-source-based model to accurately predict the S-parameters and large-signal output characteristics.