Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma

摘要

A comprehensive study of SET speed–disturb dilemma in resistive-switching random access memory (RRAM) is presented using statistically based prediction methodologies, accounting for the stochastic nature of SET. An analytical percolation model has been successful in explaining the statistical Weibull distribution of SET time and SET voltage in addition to the power-law voltage–time dependence. Two prediction methodologies using constant voltage stress (CVS) and ramp voltage stress (RVS) are proposed to evaluate the SET speed–disturb properties. The RVS method reduces analysis time and cost and yields equivalent results as the CVS method. Furthermore, the RVS method is used to evaluate the device design space and the current status of RRAM technology to meet the strict requirement of the SET speed–disturb dilemma.