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A Novel Flexible 3-D Heterogeneous Integration Scheme Using Electroless Plating on Chips With Advanced Technology Node

机译:具有先进技术节点的芯片上化学镀的新型3D异质柔性集成方案

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A novel 3-D chip-level heterogeneous integration scheme for low cost and rapid pilot demonstration is proposed in this paper. The conventional Bumping fabrication is done at wafer level. However, due to the high cost of whole wafer, opting for chips with advanced technology node is a better alternative. Therefore, with the difficulties of the bumping process at chip level, 3-D heterogeneous integration by chip stacking faces challenges. This paper presents a novel heterogeneous integration platform by using electroless plating on chips and pillar bump on wafers before stacking. This integration platform can be applied to chip-to-chip or chip-to-wafer scheme when chips are fabricated from costly advanced technology node.
机译:本文提出了一种新颖的3-D芯片级异构集成方案,以实现低成本,快速的试点示范。传统的凸块制造是在晶圆级完成的。然而,由于整个晶圆的高昂成本,选择具有先进技术节点的芯片是更好的选择。因此,在芯片级隆起工艺困难的情况下,通过芯片堆叠的3D异质集成面临挑战。本文介绍了一种新颖的异构集成平台,该技术通过在芯片上进行化学镀并在堆叠之前在晶圆上使用柱状凸点来实现。当使用昂贵的先进技术节点制造芯片时,该集成平台可以应用于芯片到芯片或芯片到晶圆方案。

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