首页>外文会议>其他>Symposium on processing, materials, and integration of damascene and 3D interconnects

Symposium on processing, materials, and integration of damascene and 3D interconnects

召开年：
召开地：
出版时间：-

会议文集：-

会议论文

热门论文

全部论文

全选（0）

1.Evaluation of stability and reactivity of solutions by in situ transmittance in electroless deposition

机译：用无电沉积原位透射率评估溶液的稳定性和反应性
- 作者：Kyung Ju Park;Hyo-Chol Koo;Taeho Lim;Jae Jeong Kim
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
2.3D Interconnect Technologies for Advanced MEMS/NEMS Applications

机译：用于高级MEMS / NEMS应用的3D互连技术
- 作者：Nicolas Lietaer;Maaike M.V. Taklo;Kari Schjalberg-Henriksen;Peter Ramm
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
3.Effect of Functional Groups of Complexing Agents on the Performance of Cu CMP Slurry

机译：络合剂官能团对Cu CMP浆料性能的影响
- 作者：Yung Jun Kim;JaeHan Bae;Jae Jeong Kim
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
4.Copper Electrodeposition Parameters Optimization for Through-Silicon Vias Filling

机译：铜电沉积参数通过硅通孔填充优化
- 作者：E. Delbos;L. Omnfes;A. Etcheberry
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
5.Reliability of Through Silicon Via Technologies

机译：通过硅通过技术的可靠性
- 作者：A. Klumpp;P. Ramm
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
6.Influence of Carbon Nanotubes on the Electrodeposition of Copper Interconnects

机译：碳纳米管对铜互连电沉积的影响
- 作者：T. Chowdhury;J. F. Rohan
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
7.Through-Silicon Via Technology for 3D Applications

机译：通过硅通过技术进行3D应用
- 作者：Harold G.G. Philipsen;Ole Luhn;Yann Civale;Yu-Shuen Wang;Deniz Sabuncuoglu Tezcan;et al
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
8.Chemical Repair of plasma damaged porous ultra Iow-κ SiOCH film using a vapor phase process

机译：使用气相过程的等离子体损坏多孔超IOW-κSioCH薄膜的化学修复
- 作者：T. Oszinda;M. Schaller;S. E. Schulz
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
9.Miniaturization of a Wireless Sensor Node by means of 3D Interconnects

机译：无线传感器节点的小型化借助于3D互连
- 作者：J. Prainsack;J. Stolle;J. Weber;M. Dielacher;M. Flatscher;et al
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
10.Integration Challenges for Copper Damascene Electroplating

机译：铜镶嵌电镀的整合挑战
- 作者：Uwe Stockgen;Susanne Wehner;Jens Heinrich;Axel Kiesel;Romy Liske
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
11.Copper Plating for 3D Interconnects

机译：用于3D互连的铜电镀
- 作者：A. Radisic;O. Ltthn;J. Vacs;S. Armini;Z. El-Mekki;et al
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
12.Effect of 5-phenyl-lH-tetrazole on Copper Dissolution for e-CMP

机译：5-苯基-1H-四唑对E-CMP铜溶解的影响
- 作者：P. Cojocaru;L. Magagnin;P. L. Cavallotti
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
13.High Speed Copper Electrodeposition for Through Silicon Via(TSV)

机译：通过硅通孔（TSV）的高速铜电沉积
- 作者：Kazuo Kondo;Yushi Suzuki;Takeyasu Saito;Naoki Okamoto
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
14.Effects of Slurry Distribution using Diaphragm and Centrifugal pumps on the Defectivity in a Cu CMP Process

机译：泥浆分布利用隔膜和离心泵对Cu CMP工艺缺陷的影响
- 作者：R. Donis;M. Fisher;L. Bauck
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
15.Addition of PEG-Thiol to Cu Electroless Plating Bath for Realizing Perfect Conformal Deposition in Through-Si Via Holes for 3-D Integration

机译：添加PEG-Thiol到Cu无电镀浴，以实现通过Si的完美保形沉积，通过孔为3-D集成
- 作者：F. Inoue;T. Yokoyama;S. Tanaka;K. Yamamoto;S. Shingubara
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年
16.The functional group effect of complexing agent on Cu CMP in the neutral environment

机译：络合剂对中性环境Cu CMP的官能团作用
- 作者：JaeHan Bae;Yung Jun Kim;Jae Jeong Kim
- 会议名称：《Symposium on processing, materials, and integration of damascene and 3D interconnects》 | 2010年