机译:具有阶梯式三联结终端延伸的垂直GaN P-N二极管的设计与制造
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA;
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA;
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA;
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA;
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA;
Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA;
Edge termination; GaN diode; junction termination extension (JTE); multiple JTE; power device; vertical p-i-n diode;
机译:低泄漏的KV-Class GaN垂直P-N二极管,具有通过P-GaN延伸的氢等离子体终端实现的非破坏性击穿
机译:1.4-KV准垂直GaN肖特基势垒二极管,具有反向P-N结终端
机译:GaN垂直p-n结二极管中边缘终止电场的
机译:GaN功率二极管阶梯蚀刻结终止扩展的仿真和设计
机译:垂直GaN P-N二极管中的缺陷介导的载波传输机制
机译:晶圆级WS2薄膜转移制备WS2 / GaN p-n结
机译:垂直GaN二极管中的反掺杂多态连接终端延伸结构
机译:在背景限制条件下p-N结二极管和肖特基内部光电二极管的检测率比较