Semiconductor device with a multiple vertical p-n junction layer, e.g. a vertical MOSFET, IGBT, bipolar transistor or diode, is produced by ion implantation and heat treatment to form vertical drift zones or separation zones

摘要

Production of a semiconductor device with a multiple vertical p-n junction layer (22) involves ion implantation and heat treatment to form vertical drift zones (22a) or separation zones (22b). Production of a semiconductor device, with a multiple p-n junction layer (22) which comprises a horizontal alternating arrangement of first conductivity type drift zones (22a) and second opposite conductivity type separation zones (22b) extending parallel to one another in the vertical direction and which forms a current path when the device is ON and is depleted when the device is OFF, comprises implanting dopant ions and heat treating to form the drift zones (22a) or the separation zones (22b). An independent claim is also included for a semiconductor device produced by the above process.