Comparison of the Detectivities of a P-N Junction Diode and a Schottky Internal Photoemission Diode under Background-Limited Conditions

摘要

The background-limited detectivities of ideal Schottky internal photoemission diodes and p-n junction diodes are compared over the wavelength range 1 to 10 micrometers. The Schottky internal photoemission diode is found to have a detectivity one to two orders of magnitude less than the p-n junction device. The detectivities of the two detectors under nonbackground-limited conditions are also compared, and a brief discussion of the functional form of the quantum yield for the Schottky device is given. (Author)